Datasheet Details
| Part number | PDR0906 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 485.86 KB |
| Description | N-Channel MOSFETs |
| Datasheet |
 PDR0906 Datasheet
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| Part number | PDR0906 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 485.86 KB |
| Description | N-Channel MOSFETs |
| Datasheet |
PDR0906 Datasheet
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|
|
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
100V N-Channel MOSFETs General.
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| PDR01N65 | N-Channel MOSFETs |
| PDR02N50 | N-Channel MOSFETs |
| PDR02N65 | N-Channel MOSFETs |
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| PDR03N60 | N-Channel MOSFETs |