Datasheet Details
| Part number | PDR03N60 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 571.32 KB |
| Description | N-Channel MOSFETs |
| Datasheet |
 PDR03N60 Datasheet
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| Part number | PDR03N60 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 571.32 KB |
| Description | N-Channel MOSFETs |
| Datasheet |
PDR03N60 Datasheet
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These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply TO251 Pin Configuration D BVDSS 600V RDSON 4.5Ω ID 3A
600V N-Channel MOSFETs PDR03N60 General.
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