Datasheet Details
| Part number | PDR02N65 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 573.28 KB |
| Description | N-Channel MOSFETs |
| Datasheet |
 PDR02N65 Datasheet
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| Part number | PDR02N65 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 573.28 KB |
| Description | N-Channel MOSFETs |
| Datasheet |
PDR02N65 Datasheet
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These N-Channel enhancement mode power field effect transistors are using advanced super junction technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply TO251 Pin Configuration PDR02N65 BVDSS 650V RDSON 9Ω ID 2A
650V N-Channel MOSFETs General.
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|---|---|
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| PDR01N50 | N-Channel MOSFETs |
| PDR01N60 | N-Channel MOSFETs |
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| PDR03N50 | N-Channel MOSFETs |
| PDR03N60 | N-Channel MOSFETs |
| PDR03N65 | N-Channel MOSFETs |
| PDR04N50 | N-Channel MOSFETs |
| PDR04N60 | N-Channel MOSFETs |
| PDR04N65 | N-Channel MOSFETs |