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C4391 - Silicon NPN Transistor

Features

  • Low collector-emitter saturation voltage VCE(sat) 0.65 max. (1.0) 14.5±0.5.
  • High collector-emitter voltage (Base open) VCEO.
  • Allowing supply with the radial taping.
  • Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 80 V c type Collector-emitter voltage (Base open) VCEO 80 V n d ge. ed Emitter-base voltage (Collector open) VEBO 5 V le sta ntinu Collector current IC 1 A a e cyc isco.

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Datasheet Details

Part number C4391
Manufacturer Panasonic
File Size 217.28 KB
Description Silicon NPN Transistor
Datasheet download datasheet C4391 Datasheet
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Full PDF Text Transcription

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Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 6.9±0.1 0.7 4.0 Unit: mm 2.5±0.1 (0.8) (0.5) (1.0) (0.2) 4.5±0.1 ■ Features • Low collector-emitter saturation voltage VCE(sat) 0.65 max. (1.0) 14.5±0.5 • High collector-emitter voltage (Base open) VCEO • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 80 V c type Collector-emitter voltage (Base open) VCEO 80 V n d ge. ed Emitter-base voltage (Collector open) VEBO 5 V le sta ntinu Collector current IC 1 A a e cyc isco Peak collector current ICP 1.
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