Datasheet4U Logo Datasheet4U.com

C4359 - Silicon NPN Transistor

Features

  • s (0.7) 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3.2).
  • High-speed switching 21.0±0.5 15.0±0.2.
  • High collector-base voltage (Emitter open) VCBO φ 3.2±0.1.
  • Wide safe oeration area.
  • Satisfactory linearity of forward current transfer ratio hFE.
  • Absolute Maximum Ratings TC = 25°C / Parameter Symbol Rating Unit 16.2±0.5 (3.5) Solder Dip 2.0±0.2 1.1±0.1 2.0±0.1 0.6±0.2 e Collector-base voltage (Emitter open) VCBO 900 V pe) Collector-emitter voltage.

📥 Download Datasheet

Datasheet preview – C4359

Datasheet Details

Part number C4359
Manufacturer Panasonic
File Size 206.98 KB
Description Silicon NPN Transistor
Datasheet download datasheet C4359 Datasheet
Additional preview pages of the C4359 datasheet.

📁 Similar Datasheet

  • C4351 - 2SC4351 (NEC)
  • C430 - Phase Control SCR 680 Amperes Avg 500-1300 Volts (Powerex Power)
  • C4300 - 2SC4300 (Allegro Micro Systems)
  • C4304 - 2SC4304 (SavantIC)
  • C4306 - 2SC4306 (Sanyo)
  • C4308 - 2SC4308 (Renesas)
  • C431 - Phase Control SCR 450-600 Amperes Avg 500-1800 Volts (Powerex Power Semiconductors)
  • C4313 - 2SC4313 (Shindengen Electric)
  • C4315 - 2SC4315 (Toshiba)
  • C4317 - 2SC4317 (Toshiba)
Other Datasheets by Panasonic

Full PDF Text Transcription

Click to expand full text
Power Transistors 2SC4359 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features (0.7) 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3.2) • High-speed switching 21.0±0.5 15.0±0.2 • High collector-base voltage (Emitter open) VCBO φ 3.2±0.1 • Wide safe oeration area • Satisfactory linearity of forward current transfer ratio hFE ■ Absolute Maximum Ratings TC = 25°C / Parameter Symbol Rating Unit 16.2±0.5 (3.5) Solder Dip 2.0±0.2 1.1±0.1 2.0±0.1 0.6±0.2 e Collector-base voltage (Emitter open) VCBO 900 V pe) Collector-emitter voltage (E-B short) VCES 900 V nc d ge.
Published: |