C4390 - 2SC4390

Features

Adoption of MBIT process.
High DC current gain (hFE=800 to 3200).
Large current capacity (IC=2A).
Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V).
High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol.

Sanyo

Datasheet Details

Part number	C4390
Manufacturer	Sanyo
File Size	69.44 KB
Description	2SC4390
Datasheet	C4390 Datasheet
Additional preview pages of the C4390 datasheet.

📁 Similar Datasheet

C4391 - Silicon NPN Transistor (Panasonic)
C4393 - 2SC4393 (Toshiba)
C4394 - 2SC4394 (Toshiba)
C430 - Phase Control SCR 680 Amperes Avg 500-1300 Volts (Powerex Power)
C4300 - 2SC4300 (Allegro Micro Systems)
C4304 - 2SC4304 (SavantIC)
C4308 - 2SC4308 (Renesas)
C4309 - 2SC4309 (Panasonic)
C431 - Phase Control SCR 450-600 Amperes Avg 500-1800 Volts (Powerex Power Semiconductors)
C4313 - 2SC4313 (Shindengen Electric)

Other Datasheets by Sanyo

C4398 - SILICON POWER TRANSISTOR
C4399 - 2SC4399
C4306 - 2SC4306
C4364 - 2SC4364
C4365 - 2SC4365

Full PDF Text Transcription

Click to expand full text

Ordering number : EN2958B 2SC4390 SANYO Semiconductors DATA SHEET 2SC4390 NPN Epitaxial Planar Silicon Transistor High hFE, AF Amplifier Applications Features • Adoption of MBIT process. • High DC current gain (hFE=800 to 3200). • Large current capacity (IC=2A). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V). • High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta=25°C Conditions Mounted on a ceramic board (250mm2✕0.

Published: Jun 9, 2015 |