1 2 3
6 5 4
0.9±0.1
q
2SK1103+UN1213 (transistors with built-in resistor)
0.7±0.1
0 to 0.1
0.2±0.1
s Absolute Maximum Ratings
Parameter Gate to drain voltage Tr1 Drain current Gate current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VGDS ID IG VCBO VCEO IC PT Tj Tstg
(Ta=25˚C)
Ratings.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Composite Transistors
XP8081
Silicon N-channel junction FET (Tr1) Silicon NPN epitaxial planer transistor (Tr2)
Unit: mm
0.425 1.25±0.1 0.425
0.2±0.05
For analog switching (Tr1)/switching (Tr2)
0.65
2.1±0.1
0.65
q q
Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half.
2.0±0.1
s Features
1 2 3
6 5 4
0.9±0.1
q
2SK1103+UN1213 (transistors with built-in resistor)
0.7±0.1
0 to 0.1
0.2±0.
XP8081 Datasheet
