XP83T03GJB - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

General Description

XP83T03 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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XP83T03GJB n-channel enhancement mode power mosfet by YAGEO - Datasheet Preview

Datasheet Details

Part number	XP83T03GJB
Manufacturer	YAGEO
File Size	218.95 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	XP83T03GJB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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XP83T03GJB Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G ▼ RoHS Compliant & Halogen-Free S Description XP83T03 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-251S short lead package is preferred for all commercial-industrial through-hole applications without leadcutted.