XP8N4R2MT - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

General Description

XP8N4R2 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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XP8N4R2MT n-channel enhancement mode power mosfet by YAGEO - Datasheet Preview

Datasheet Details

Part number	XP8N4R2MT
Manufacturer	YAGEO
File Size	323.71 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	XP8N4R2MT Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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XP8N4R2MT Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ SO-8 Compatible with Heatsink ▼ Ultra Low On-resistance ▼ RoHS Compliant & Halogen-Free G S Description XP8N4R2 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. BVDSS RDS(ON) 80V 4.