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Composite Transistors
XP1D873
Silicon N-channel junction FET
Unit: mm
2.1±0.1 0.425 1.25±0.1 0.425
0.2±0.05 0.12 – 0.02
+0.05
For analog switching
0.65
s Features
q q q
0.9± 0.1
s Basic Part Number of Element
q
s Absolute Maximum Ratings
Parameter Gate to drain voltage Rating Drain current of element Gate current Total power dissipation Overall Channel temperature Storage temperature Symbol VGDS ID IG PT Tch Tstg
(Ta=25˚C)
Ratings –50 30 10 150 150 –55 to +150 Unit V mA mA mW ˚C ˚C
1 : Source (FET1) 2 : Drain (FET1, 2) 3 : Source (FET2)
0 to 0.1
2SK1103 × 2 elements
0.7±0.1
0.2
Two elements incorporated into one package. (Drain-coupled FETs) Reduction of the mounting area and assembly cost by one half. Low-frequency and low-noise J-FET.
2.0±0.1
1 2 3
5
0.65
4
0.2±0.
XP1D873 Datasheet
