Datasheet4U Logo Datasheet4U.com

XN0F261 - Silicon NPN Transistor

Features

  • s.
  • Two elements incorporated into one package (Collector-coupled transistors with built-in resistor).
  • Reduction of the mounting area and assembly cost by one half 4 2.90+0.20.
  • 0.05 1.9±0.1 (0.95) (0.95) 5 6 0.16+0.10.
  • 0.06 1.50+0.25.
  • 0.05 2.8+0.2.
  • 0.3 3 2 1 0.30+0.10.
  • 0.05.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
XN0NE92 Silicon P-channel MOSFET Panasonic

Other Datasheets by Panasonic

Part Number Description
XN0F262 Silicon NPN Transistor
XN0F256 Silicon NPN epitaxial planar type
XN01110 Silicon PNP epitaxial planer transistor
XN01112 Silicon PNP Transistor
XN01114 Silicon PNP epitaxial planer transistor

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Composite Transistors XN0F261 Silicon NPN epitaxial planar type Unit: mm For muting ■ Features • Two elements incorporated into one package (Collector-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 4 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 3 2 1 0.30+0.10 –0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 30 20 5 600 300 150 −55 to +150 Unit V V V mA mW °C °C 0.50+0.10 –0.05 10˚ 1.1+0.2 –0.1 (0.
Published: |