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Composite Transistors
XN0F256
Silicon NPN epitaxial planar type
Unit: mm
For muting ■ Features
• Two elements incorporated into one package (Collector-coupled transistors with built-in resistor) • Low collector-emitter saturation voltage VCE(sat) • Reduction of the mounting area and assembly cost by one half
4
2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6
0.16+0.10 –0.06
1.50+0.25 –0.05
2.8+0.2 –0.3
3
2
1
0.30+0.10 –0.05 0.50+0.10 –0.05 10˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 30 20 5 600 300 150 −55 to +150 Unit V V V mA mW °C °C
1.
XN0F256 Datasheet
