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XN0NE92 - Silicon P-channel MOSFET

Features

  • s.
  • Two elements incorporated into one package.
  • Reduction of the mounting area and assembly cost by one half.
  • High-speed switching, low on resistance.
  • Absolute Maximum Ratings Ta = 25°C FET SBD Parameter Symbol Rating Drain-source surrender voltage VDSS.
  • 12 Gate-source surrender voltage VGSS ±15 Drain current ID.
  • 1.2 Peak drain current IDP.
  • 3 Total power dissipation.
  • PT 600 Channel temperature Tch 125 Storage tempera.

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Datasheet Details

Part number XN0NE92
Manufacturer Panasonic
File Size 169.77 KB
Description Silicon P-channel MOSFET
Datasheet download datasheet XN0NE92 Datasheet

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Full PDF Text Transcription

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Plhtetap:s//epvaisnitafsoollnioc.wicno.gjp/UsReLmiacboonu/tel-iatnedsetxi.nhftormlmation.DisMcaionnttiennuaendce/ This product complies with the RoHS Directive (EU 2002/95/EC). Multi Chip Discrete XN0NE92 Silicon P-channel MOSFET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter ■ Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half • High-speed switching, low on resistance ■ Absolute Maximum Ratings Ta = 25°C FET SBD Parameter Symbol Rating Drain-source surrender voltage VDSS −12 Gate-source surrender voltage VGSS ±15 Drain current ID −1.
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