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XN04504 - Silicon NPN Transistor

Features

  • .3 5˚ Publication date: February 2004 1 XN04504 PT  Ta 500 IC  VCE IB = 4.0 mA Ta = 25°C 3.5 mA 3.0 mA 0.8 2.5 mA 2.0 mA 0.6 1.5 mA 0.4 1.0 mA 0.5 mA VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) 102 IC / IB = 25 1.2 Total power dissipation PT (mW) 400 1.0 300 Collector current IC (A) 10 1 200 Ta = 75°C 10.
  • 1 25°C.
  • 25°C 100 0.2 0 0 40 80 120 160 0 0 1 2 3 4 5 6 10.
  • 2 10.
  • 2 10.
  • 1 1 10 Ambient temperature T.

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Full PDF Text Transcription

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Composite Transistors XN04504 (XN4504) Silicon NPN epitaxial planar type For amplification of low-frequency output 4 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 Unit: mm 0.16+0.10 –0.06 1.50+0.25 –0.05 0.30+0.10 –0.05 0.50+0.10 –0.05 10˚ ■ Basic Part Number • 2SD1328 × 2 1.1+0.2 –0.1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC ICP PT Tj Tstg 25 20 12 0.5 1 300 150 −55 to +150 V V V A A mW °C °C 1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) EIAJ : SC-74 0 to 0.1 Parameter Symbol Rating Unit Marking Symbol: 5X Internal Connection 4 5 6 Tr2 1.1+0.3 –0.
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