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Composite Transistors
XN04502 (XN4502)
Silicon NPN epitaxial planar type
For general amplification
■ Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half
■ Basic Part Number • 2SD0602A (2SD602A) × 2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)
VCBO VCEO VEBO
60 50 5
Collector current
IC 0.5
Peak collector current
ICP 1
Total power dissipation
PT 300
Junction temperature
Tj 150
Storage temperature
Tstg −55 to +150
Unit V V V A A mW °C °C
0 toc0.1
type)
1.1–+00..12e/
1.1–+00..13
2.90+–00..0250 1.9±0.1
(0.95) (0.95)
456
32
0.30+–00..0150 0.50+–00..0150 10˚
1
0.65±0.15
1.50–+00.