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OH10010 - GaAs Hall Device

Datasheet Summary

Features

  • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T).
  • Input resistance: typ. 0.75 kΩ.
  • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field.
  • Small temperature coefficient of the hall voltage: β ≤.
  • 0.06%/°C.
  • Mini type (4-pin) package with positioning projection. Allowing automatic insertion through the magazine package. 0.65 ± 0.15 4 Unit : mm 2.8.
  • 0.3 + 0.2 1.5 ± 0.2 1 0.5 R 0.65 ± 0.15 0.4.
  • 0.05 (0.5.

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Datasheet Details

Part number OH10010
Manufacturer Panasonic Semiconductor
File Size 45.76 KB
Description GaAs Hall Device
Datasheet download datasheet OH10010 Datasheet
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Full PDF Text Transcription

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GaAs Hall Devices OH10010 GaAs Hall Device Magnetic sensor I Features • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field • Small temperature coefficient of the hall voltage: β ≤ − 0.06%/°C • Mini type (4-pin) package with positioning projection. Allowing automatic insertion through the magazine package. 0.65 ± 0.15 4 Unit : mm 2.8 − 0.3 + 0.2 1.5 ± 0.2 1 0.5 R 0.65 ± 0.15 0.4 −0.05 (0.5 R) 0.16 − 0.06 +0.1 0.95 0.95 2.9 ± 0.2 1.9 ± 0.2 3 2 0.5 ± 0.1 1.1 − 0.1 + 0.2 0.8 0 to 0.1 0.4 ± 0.2 0.4 ± 0.2 φ 1.0 ± 0.
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