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OH10003 - GaAs Hall Device

Datasheet Summary

Features

  • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T).
  • Input resistance: typ. 0.85 kΩ.
  • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field.
  • Small temperature coefficient of the hall voltage: β ≤.
  • 0.06%/°C.
  • Sealed in the Mini type (4-pin) package. Allowing automatic insertion through the taping and the magazine package. 2.9 ± 0.2 0.65 ± 0.15 2.8.
  • 0.3 1.5 + 0.2.
  • 0.3 + 0.2 Unit : mm 0.65 ± 0.15 0.5 R 0.

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Datasheet Details

Part number OH10003
Manufacturer Panasonic Semiconductor
File Size 48.74 KB
Description GaAs Hall Device
Datasheet download datasheet OH10003 Datasheet
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GaAs Hall Devices OH10003 GaAs Hall Device Magnetic sensor I Features • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.85 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field • Small temperature coefficient of the hall voltage: β ≤ − 0.06%/°C • Sealed in the Mini type (4-pin) package. Allowing automatic insertion through the taping and the magazine package. 2.9 ± 0.2 0.65 ± 0.15 2.8 − 0.3 1.5 + 0.2 − 0.3 + 0.2 Unit : mm 0.65 ± 0.15 0.5 R 0.95 1.9 ± 0.2 4 1 0.95 3 2 1.1 − 0.1 • Various hall motor (VCR, phonograph, VD, CD, and FDD) • Automotive equipment • Industrial equipment • Applicable to wide-varying field (OA equipment, etc.
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