Datasheet4U Logo Datasheet4U.com

OH12B - Hall Effect Element

📥 Download Datasheet

Datasheet preview – OH12B

Datasheet Details

Part number OH12B
Manufacturer OUZHUO
File Size 299.91 KB
Description Hall Effect Element
Datasheet download datasheet OH12B Datasheet
Additional preview pages of the OH12B datasheet.

📁 Similar Datasheet

  • OH10003 - GaAs Hall Device (Panasonic Semiconductor)
  • OH10004 - GaAs Hall Device (Panasonic Semiconductor)
  • OH10008 - GaAs Hall Device (Panasonic Semiconductor)
  • OH10009 - GaAs Hall Device (Panasonic Semiconductor)
  • OH10010 - GaAs Hall Device (Panasonic Semiconductor)
  • OH137 - Unipolar Hall-Effect Switch (Nanjing Ouzhuo Technology)
  • OH137 - Hall switch (Carter Microwave)
  • OH180U - Hallogic Hall-Effect Sensors (TT)
Other Datasheets by OUZHUO

Full PDF Text Transcription

Click to expand full text
| HALL EFFECT SENOR IC | MAGNETIC SENSOR | OH12B Hall Effect Element 1. Order Information Part number OH12B, Old Part number: SH12B Operation Temperature -40～120℃ 2. Maximum Ratings (Ta=25℃) Rank F (266 ~ 320mV) E (228 ~ 274mV) Package SOT143, 3000 pcs/reel Parameter Symbol Rating Unit Maximum Input Current Imax 20 (at 25℃) mA Maximum Power Dissipation Pmax 150 (at 25℃) mW Operating Temperature Range Top －40 ~ ＋120 ℃ Storage Temperature Range Tst －40 ~ ＋150 ℃ 3. Electrical Characteristics (Measured at 25℃) Parameter Symbol Measurement Conditions Min Output Hall Voltage VH Vin＝1V, B＝500G 196 Input Resistance Rin I＝0.1mA 240 Output Resistance Rout I＝0.1mA 240 Offset Voltage VO Vin＝1V, B＝0G －7 Temp. Coeff. of VH α Ta＝0 ~ ＋40℃ AVG. - Temp.
Published: |