LNA2904L - GaAs Infrared Light Emitting Diode

Product Overview

Panasonic Semiconductor

Part number	LNA2904L
Manufacturer	Panasonic Semiconductor
File Size	40.35 KB
Description	GaAs Infrared Light Emitting Diode
Datasheet	LNA2904L Datasheet
Additional preview pages of the LNA2904L datasheet.

High-power output, high-efficiency : Ie = 10 mW/sr (min. ) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current High center radiant intensity Transparent epoxy resin package 13.5±1.0 11.5±1.0 3.9±0.3 1.0 7.65±0.2 ø5.0±0.2 Not soldered 2-1.0±0.15 2-0.6±0.15 2.54 0.6±0.15 2 1 1: Cathode 2: Anode ø6.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (.

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Published: Mar 22, 2005 |