q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings.
27.
18.
7.
8.
5 0.75 150.
55 ~ +150 Unit V V
1 2 3 0.45.
0.1 1.27
+0.2
13.5±0.5
Low collector to emitter saturation voltage VCE(sat). Large collector c.
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Transistor
2SB976
Silicon PNP epitaxial planer type
For low-frequency output amplification For DC-DC converter For stroboscope
Unit: mm
5.0±0.2 4.0±0.2
s Features
q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings –27 –18 –7 –8 –5 0.75 150 –55 ~ +150 Unit V V
1 2 3 0.45 –0.1 1.27
+0.2
13.5±0.5
Low collector to emitter saturation voltage VCE(sat). Large collector current IC.
5.1±0.2
0.45 –0.1
1.27
+0.2
2.3±0.2
V A A W ˚C ˚C
2.54±0.
2SB976 Datasheet
