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2SB970 - PNP Transistor

Features

  • q q 2.8.
  • 0.3 0.65±0.15 +0.2 +0.25 1.5.
  • 0.05 0.65±0.15 1.9±0.2 0.95 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.95 2.9.
  • 0.05 1 +0.2 3 0.4.
  • 0.05 +0.1 2 1.1.
  • 0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector pow.

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Transistor 2SB970 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm s Features q q 2.8 –0.3 0.65±0.15 +0.2 +0.25 1.5 –0.05 0.65±0.15 1.9±0.2 0.95 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.95 2.9 –0.05 1 +0.2 3 0.4 –0.05 +0.1 2 1.1 –0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –15 –10 –7 –1 – 0.
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