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2SB976 - Power Transistors

Download the 2SB976 datasheet PDF. This datasheet also covers the 2SB0976 variant, as both devices belong to the same power transistors family and are provided as variant models within a single manufacturer datasheet.

Features

  • s.
  • Low collector-emitter saturation voltage VCE(sat).
  • Large collector current IC 0.7±0.1 Unit: mm 5.0±0.2 4.0±0.2 0.7±0.2 12.9±0.5.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating.
  • 27.
  • 18.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SB0976_PanasonicSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors 2SB0976 (2SB976) www.DataSheet4U.net Silicon PNP epitaxial planar type For low-frequency output amplification For DC-DC converter For stroboscope ■ Features • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC 0.7±0.1 Unit: mm 5.0±0.2 4.0±0.2 0.7±0.2 12.9±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −27 −18 −7 −5 −8 0.75 150 −55 to +150 Unit V V 1 2 3 0.45+0.15 –0.1 2.5+0.6 –0.2 2.5+0.6 –0.2 0.45+0.15 –0.1 2.3±0.2 V A A W °C °C 5.1±0.
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