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2SA1254 - Silicon NPN epitaxial planer type Transistor

Features

  • 1.5 1.5 R0.9 R0.9 1.0±0.1 R 0. 7 Unit µA µA µA 70 150 300.
  • 0.1.
  • 0.7 2.8 22 1.2 220 MHz V V 4.0 50 2.0 dB Ω pF.
  • h FE Rank classification B 70 ~ 140 C 110 ~ 220 hFE Rank 1 Transistor PC.
  • Ta 500.
  • 30 Ta=25˚C 450.
  • 25 2SA1254 IC.
  • VCE Collector to emitter saturation voltage VCE(sat) (V).
  • 100.
  • 30.
  • 10.
  • 3.
  • 1 Ta=75˚C 25˚C VCE(sat).
  • IC IC/IB=10 Collector power dissipation PC (mW) 350 3.

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Datasheet Details

Part number 2SA1254
Manufacturer Panasonic
File Size 38.68 KB
Description Silicon NPN epitaxial planer type Transistor
Datasheet download datasheet 2SA1254 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SA1254 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2206 6.9±0.1 2.5±0.1 1.0 Unit: mm 0.4 2.4±0.2 2.0±0.2 3.5±0.1 q q q 0.85 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –30 –20 –5 –60 –30 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Base 2:Collector 3:Emitter 3 0.55±0.1 0.45±0.05 2 1 2.5 2.
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