Datasheet4U Logo Datasheet4U.com

2SA1250 - POWER TRANSISTOR

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) Low Collector Saturatioin Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power switching applicatio

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA1250 SILICON POWER TRANSISTOR SavantIC
2SA1252 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
2SA1253 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
2SA1254 Silicon PNP epitaxial planer type Transistor Panasonic Semiconductor
2SA1254 Silicon NPN epitaxial planer type Transistor Panasonic Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SA1259 Silicon PNP Power Transistors
2SA1205 POWER TRANSISTOR
2SA1209 POWER TRANSISTOR
2SA1214 Silicon PNP Power Transistor
2SA1215 POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Power Transistor 2SA1250 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·Low Collector Saturatioin Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 30 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.iscsemi.
Published: |