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2SA1259 - Silicon PNP Power Transistors

Description

High DC Current Gain- : hFE = 2000(Min)@ IC= -2.5A Low Collector-Emitter Saturation Voltage : VCE(sat) = -1.5V(Max)@ IC= -2.5A Complement to Type 2SC3145 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purp

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -2.5A ·Low Collector-Emitter Saturation Voltage : VCE(sat) = -1.5V(Max)@ IC= -2.5A ·Complement to Type 2SC3145 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier high fT and high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=125℃ Tj Junction Temperature -8 A 30 W 1.
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