2SA1022 - Silicon PNP epitaxial planer type Transistor

Panasonic

Key Features

s.
High frequency voltage fT e.
Mini type package, allowing downsizing of the equipment and ge automatic insertion through the tape packing and the magazine c ta packing 0.4±0.2 1.50.
+00..0255 2.8.
+00..32 5˚ (0.65) an edlifecycle s.
Absolute Maximum Ratings Ta = 25°C t Parameter Symbol Rating Unit 1.1.
+00..12 1.1.
+00..13 uc Collector-base voltage (Emitter open) VCBO.
30 V n u rod Collector-emitter voltage (Base open) V.

2SA1022 silicon pnp epitaxial planer type transistor by Panasonic - Datasheet Preview

Datasheet Details

Part number	2SA1022
Manufacturer	Panasonic
File Size	222.72 KB
Description	Silicon PNP epitaxial planer type Transistor
Datasheet	2SA1022 Datasheet

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Other Datasheets by Panasonic

Part Number	Description
2SA1018	Silicon PNP Transistor
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Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SA1022 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2295 / ■ Features • High frequency voltage fT e . • Mini type package, allowing downsizing of the equipment and ge automatic insertion through the tape packing and the magazine c ta packing 0.4±0.2 1.50–+00..0255 2.8–+00..32 5˚ (0.65) an edlifecycle s ■ Absolute Maximum Ratings Ta = 25°C t Parameter Symbol Rating Unit 1.1–+00..12 1.1–+00..13 uc Collector-base voltage (Emitter open) VCBO −30 V n u rod Collector-emitter voltage (Base open) VCEO −20 V 0 to 0.1 te tin r P Emitter-base voltage (Collector open) VEBO −5 V fou .