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PJP8N60 - 600V N-Channel Enhancement Mode MOSFET

PanJit Semiconductor

Features

8A , 600V, RDS(ON)=1.2Ω@VGS=10V, ID=4.0A.
Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 1 2 G 3 D S 1 2 G 3 S D.

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PJP8N60 600v n-channel enhancement mode mosfet by Pan Jit International - Datasheet Preview

Datasheet Details

Part number	PJP8N60
Manufacturer	PanJit Semiconductor
File Size	195.75 KB
Description	600V N-Channel Enhancement Mode MOSFET
Datasheet	PJP8N60 Datasheet

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Full PDF Text Transcription

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PJP8N60 / PJF8N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 8A , 600V, RDS(ON)=1.2Ω@VGS=10V, ID=4.

Published: Feb 26, 2011 |