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PTP40N30 - 300V N-Channel MOSFET

Features

  • Proprietary New Planar Technology.
  • RDS(ON),typ. =0.12 Ω@VGS=10V.
  • Low Gate Charge Minimize Switching Loss.
  • Fast Recovery Body Diode PTP40N30 BVDSS 300V RDS(ON),typ. 0.12Ω ID 40A.

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Datasheet Details

Part number PTP40N30
Manufacturer PIP
File Size 819.98 KB
Description 300V N-Channel MOSFET
Datasheet download datasheet PTP40N30 Datasheet

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Full PDF Text Transcription

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300V N-Channel MOSFET General Features  Proprietary New Planar Technology  RDS(ON),typ.=0.12 Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  Fast Recovery Body Diode PTP40N30 BVDSS 300V RDS(ON),typ. 0.
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