PTP5027
Aug 2006
NPN Silicon Power Transistor 3.0 Amperes / 50 Watts High Voltage and High Reliability
TO-220 1. Base 2. Collector 3. Emitter
- High Speed Switching
- Wide SOA
Absolute Maximum Ratings
CHARACTERISTICS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature
TC=25℃ unless otherwise noted SYMBOL VCBO VCEO VEBO IC ICP IB PC TJ TSTG RATING 1100 800 7 3 10 1.5 50 150 -55~150 UNIT V V V A A A W ℃ ℃
Electrical Characteristics
CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Collector Cut0off Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn on Time Storage Time Fall Time
TC=25℃ unless...
