• Part: PTP04N08N
  • Description: 80V N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: PIP
  • Size: 1.07 MB
Download PTP04N08N Datasheet PDF
PIP
PTP04N08N
Features - Proprietary New Trench Technology - RDS(ON),typ.=4.2 mΩ@VGS=10V - Low Gate Charge Minimize Switching Loss - Fast Recovery Body Diode BVDSS 80V RDS(ON),typ. 4.2mΩ ID[2] 130A Applications - High efficiency DC/DC Converters - Synchronous Rectification - UPS Inverter Ordering Information Part Number Package TO-220 Brand TO-220 Package Not to Scale Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGSS ID @ Tc =100℃ IDM EAS dv/dt TL TPAK Parameter Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current[2] Continuous Drain Current[3] Continuous Drain Current @ Tc=100℃[2] Pulsed Drain Current at VGS=10V[2,4] Single Pulse Avalanche Energy Peak Diode Recovery dv/dt[3] Power Dissipation Derating Factor above 25℃ Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds 80 ±20 130 80 100 390 900 5.0 300 2.0 300 260 Unit V A m J...