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NTB65N02R, NTP65N02R
Power MOSFET 65 A, 24 V N−Channel TO−220, D2PAK
Features
• Planar HD3e Process for Fast Switching Performance • Low RDSon to Minimize Conduction Loss • Low Ciss to Minimize Driver Loss • Low Gate Charge • Pb−Free Packages are Available*
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V(BR)DSS 24 V
RDS(on) TYP 8.4 mW @ 10 V
ID MAX 65 A
D
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current −
Continuous @ TC = 25°C, Chip Continuous @ TC =25°C, Limited by Package Single Pulse (tp = 10 ms)
VDSS
VGS
RqJC PD
ID ID IDM
25
±20
2.0 62.
P65N02RG Datasheet
