Click to expand full text
P6503FMA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
55mΩ @VGS = -10V
ID -3.1A
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±12
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
-3.1 -2.4 -12
Power Dissipation
TA = 25 °C TA = 70 °C
PD
0.96 0.62
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Ambient2
RqJA
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper.
MAXIMUM 130
UNITS °C / W
REV 1.
P6503FMA Datasheet
