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P6503FM6
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
65mΩ @VGS = -4.5V
ID -3.6A
SOT-23-6
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±12
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
-3.6 -3 -19
Avalanche Current
IAS -19
Avalanche Energy
L=0.1mH
EAS
18
Power Dissipation
TA = 25 °C TA = 70 °C
PD
1 0.5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient 1pusle width Limited by maximum junction temperature.
SYMBOL RqJA
TYPICAL
MAXIMUM UNITS 130 °C / W
Ver 1.
P6503FM6 Datasheet
