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SiC Power MOSFET Module
1200 V, 80 mW, 20 A 3-Phase Bridge Power Module
NVXK2VR80WDT2
Features
• DIP Silicon Carbide 3−Phase Bridge Power Module for On−board
Charger (OBC) for xEV Applications
• Creepage and Clearance per IEC 60664−1, IEC 60950−1 • Compact Design for Low Total Module Resistance • Module Serialization for Full Traceability • Lead Free, ROHS and UL94V−0 Compliant • Automotive Qualified per AEC−Q101 and AQG324
Typical Applications
• PFC for On−Board Charger in xEV Applications
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
1200
V
Gate−to−Source Voltage
VGS
+25/−15 V
Recommended Operation Values of Gate−to−Source Voltage, TJ ≤ 175°C
VGSop
+20/−5
V
Continuous Drain Current (Note 1)
TC = 25°C
ID
20
NVXK2VR80WDT2 Datasheet
