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SiC Power MOSFET Module
1200 V, 80 mW, 31 A Full Bridge Power Module
NVXK2PR80WXT2
Features
• DIP Silicon Carbide Full Bridge Power Module for On−Board
Charger (OBC) for xEV Applications
• Creepage and Clearance per IEC60664−1, IEC 60950−1 • Compact Design for Low Total Module Resistance • Module Serialization for Full Traceability • Lead Free, ROHS and UL94V−0 Compliant • Automotive Qualified per AEC−Q101 and AQG324
Typical Applications
• DC−DC and On−Board Charger in xEV Applications
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Recommended Operation Values of Gate−to−Source Voltage, TJ ≤ 175°C
Continuous Drain Current (Note 1)
TC = 25°C
VDSS
1200
V
VGS +25/−15 V
VGSop +20/−5
V
ID
31
A
Pow
NVXK2PR80WXT2 Datasheet
