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NVMFS5885NL
Power MOSFET
60 V, 15 mW, 39 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFS5885NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Curr2e,n3t)RYJ−mb (Notes 1, Power Dissipation RYJ−mb (Notes 1, 2, 3)
Steady State
Tmb = 25°C Tmb = 100°C Tmb = 25°C Tmb = 100°C
Continuous Drain Cur-
rent 3)
RqJA
(Notes
1
&
Power Dissipation RqJA (Notes 1 & 3)
Steady State
TA = 25°C TA = 100°C TA = 25°C TA = 100°C
Pulsed Drain Current TA = 25°C, tp =