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NTMFS5834NL, NVMFS5834NL Power MOSFET
Features
40 V, 75 A, 9.3 mW, Single N−Channel
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Low RDS(on) Low Capacitance Optimized Gate Charge NVMF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current TA = 25°C TA = 100°C TA = 25°C Steady State TA = 100°C TC = 25°C TC = 100°C TC = 25°C TC = 100°C tp = 10 ms IDM TJ, TSTG IS EAS IAS TL PD ID PD Symbol VDSS VGS ID Value 40 ±20 14 12 3.6 2.