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NVMFS5830NL - Power MOSFET

Datasheet Summary

Features

  • 40 V, 2.3 mW, 185 A, Single N.
  • Channel.
  • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC.
  • Q101 Qualified and PPAP Capable These are Pb.
  • Free Devices.
  • http://onsemi. com V(BR)DSS 40 V Value 40 ± 20 185 131 Unit V V A D (5,6) RDS(ON) MAX 2.3 mW @ 10 V 3.6 mW @ 4.5 V ID MAX 185 A.

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Datasheet Details

Part number NVMFS5830NL
Manufacturer ON Semiconductor
File Size 136.38 KB
Description Power MOSFET
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NVMFS5830NL Power MOSFET Features 40 V, 2.3 mW, 185 A, Single N−Channel • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices* http://onsemi.com V(BR)DSS 40 V Value 40 ± 20 185 131 Unit V V A D (5,6) RDS(ON) MAX 2.3 mW @ 10 V 3.6 mW @ 4.
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