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MOSFET - Power, Single N-Channel, TOLL
100 V, 1.8 mW, 265 A
NVBLS1D7N10MC
Features
• Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Lowers Switching Noise/EMI • These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 3)
Power Dissipation RqJC (Note 1)
TC = 25°C
ID
Steady TC = 100°C
State TC = 25°C
PD
TC = 100°C
265
A
187
303 W
152
Continuous Drain Current RqJA (Notes 1, 2, 3)
Power Dissipation RqJA (Notes 1, 2)
TA = 25°C
ID
Steady TA = 100°C
State TA = 25°C
PD
TA = 100°C
32.4 A
22.9
4.5
W
2.
NVBLS1D7N10MC Datasheet
