NVB110N65S3F - N-Channel MOSFET

Datasheet Summary

Description

SUPERFET® III MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

700 V @ TJ = 150°C.
Typ. RDS(on) = 93 mW.
Ultra Low Gate Charge (Typ. Qg = 58 nC).
Low Effective Output Capacitance (Typ. Coss(eff. ) = 533 pF).
100% Avalanche Tested.
Qualified with AEC.
Q101.
These Devices are Pb.
Free and are RoHS Compliant Typical.

ON Semiconductor

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Datasheet Details

Part number	NVB110N65S3F
Manufacturer	ON Semiconductor
File Size	159.62 KB
Description	N-Channel MOSFET
Datasheet	NVB110N65S3F Datasheet
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NVB110N65S3F MOSFET – Power, Single N-Channel, D2PAK 650 V, 110 mW, 30 A Description SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 93 mW • Ultra Low Gate Charge (Typ.

Published: Apr 1, 2020 |