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NVBG022N120M3S - SiC MOSFET

Datasheet Summary

Features

Typ. RDS(on) = 22 mW @ VGS = 18 V.
Ultra Low Gate Charge (QG(tot) = 142 nC).
High Speed Switching with Low Capacitance (Coss = 146 pF).
100% Avalanche Tested.
AEC.
Q101 Qualified and PPAP Capable.
These Devices are RoHS Compliant Typical.

onsemi

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NVBG022N120M3S SiC MOSFET by onsemi - Datasheet Preview — Datasheet preview – NVBG022N120M3S

Datasheet Details

Part number	NVBG022N120M3S
Manufacturer	onsemi
File Size	311.63 KB
Description	SiC MOSFET
Datasheet	NVBG022N120M3S Datasheet
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Full PDF Text Transcription

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Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L NVBG022N120M3S Features • Typ.

Published: Apr 14, 2025 |