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NTMFS5H610NL - N-Channel Power MOSFET

Datasheet Summary

Features

  • Small Footprint (5x6 mm) for Compact Design.
  • Low RDS(on) to Minimize Conduction Losses.
  • Low QG and Capacitance to Minimize Driver Losses.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – NTMFS5H610NL

Datasheet Details

Part number NTMFS5H610NL
Manufacturer ON Semiconductor
File Size 218.36 KB
Description N-Channel Power MOSFET
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NTMFS5H610NL MOSFET – Power, Single, N-Channel 60 V, 10 mW, 44 A Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°C 44 A 28 43 W 17 Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1, 2) TA = 25°C ID Steady TA = 100°C State TA = 25°C PD TA = 100°C 12 A 7.3 3.0 W 1.
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