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NTMFS5832NL
MOSFET – Power
40 V, 111 A, 4.2 mW
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJA (Note 1)
VDSS
40
V
VGS
±20
V
TA = 25°C
ID
20
A
TA = 70°C
16
Power Dissipation
TA = 25°C
PD
RqJA (Note 1)
Steady TA = 70°C
Continuous Drain
State TC = 25°C
ID
Current RqJC (Note 1)
TC = 70°C
3.1
W
1.
NTMFS5832NL Datasheet
