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NTMFS4H11NF
Power MOSFET
25 V, 334 A, Single N−Channel, SO−8FL
Features
• Integrated Schottky Diode • Optimized Design to Minimize Conduction and Switching Losses • Optimized Package to Minimize Parasitic Inductances • Optimized material for improved thermal performance • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• High Performance DC-DC Converters • System Voltage Rails • Netcom, Telecom • Servers • Point of Load
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current (tp = 10 ms) Single Pulse Drain-to-Sourc
NTMFS4H11NF Datasheet
