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NTMFS4H01NF - Power MOSFET

Features

  • Integrated Schottky Diode.
  • Optimized Design to Minimize Conduction and Switching Losses.
  • Optimized Package to Minimize Parasitic Inductances.
  • Optimized material for improved thermal performance.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Full PDF Text Transcription

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NTMFS4H01NF Power MOSFET 25 V, 334 A, Single N−Channel, SO−8FL Features • Integrated Schottky Diode • Optimized Design to Minimize Conduction and Switching Losses • Optimized Package to Minimize Parasitic Inductances • Optimized material for improved thermal performance • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • High Performance DC-DC Converters • System Voltage Rails • Netcom, Telecom • Servers & Point of Load MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (TA = 25°C, Note 1) VDSS VGS ID 25 ±20 54 V V A Power Dissipation RqJA (TA = 25°C, Note 1) Continuous Drain Current RqJC (TC = 25°C, Note 1) PD 3.
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