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NTMD5838NL
MOSFET – Power, Dual, N-Channel, SO-8
40 V, 8.9 A, 20 mW
Features
• Low RDS(on) • Low Capacitance • Optimized Gate Charge • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJA (Note 1)
Power Dissipation RqJA (Note 1)
Continuous Drain Current RqJA (Note 1)
Power Dissipation RqJA (Note 1)
Pulsed Drain Current
TA = 25°C
Steady State
TA = 70°C TA = 25°C
TA = 70°C
TA = 25°C
t ≤10 s
TA = 70°C TA = 25°C
TA = 70°C
tp = 10 ms
VDSS VGS ID
PD
ID
PD
IDM
40
V
±20
V
7.4
A
5.9
2.1
W
1.3
8.9
A
7.1
3.0
W
1.
NTMD5838NL Datasheet
