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NTMD5836NL Power MOSFET
40 V, Dual N−Channel, SOIC−8
Features
• • • • •
Asymmetrical N Channels Low RDS(on) Low Capacitance Optimized Gate Charge These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
ID Max (Notes 1 and 2) 11 A G1
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N−Channel 1 D1
N−Channel 2 D2
V(BR)DSS Channel 1 40 V
RDS(on) Max 12 mW @ 10 V 16 mW @ 4.5 V
G2 S1 S2
Channel 2
40 V
25 mW @ 10 V 30.8 mW @ 4.5 V
6.5 A
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 2.
NTMD5836NL Datasheet
