NTMD3P03R2G
Features
VDS (V)=-30V RDS(ON)<85mΩ(VGS=-10V) RDS(ON)<125mΩ(VGS=-4.5V) High Density Power MOSFET with Low RDS(ON) High Efficiency ponents in a Dual SOP- 8 Package
Miniature SOP-8 Surface Mount Package Saves Board Space IDSS Specified at Elevated Temperature Avalanche Energy Specified Diode Exhibits High Speed with Soft Recovery
3.Pinning information
D1 D1 D2 D2
D1
D2
Pin
Symbol Description
SOP-8
2,4
GATE
1,3 5,6,7,8
SOURCE
DRAIN
G1
G2
S1 G1 S2 G2
S1
S2
3.Absolute Maximum Ratings TJ=25°C unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Junction- to- Ambient (Note 1) Total Power Dissipation @ TA=25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4) Junction- to- Ambient (Note 2) Total Power Dissipation @ TA=25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4)
Thermal Resistance Thermal Resistance
Symbol VDSS VGSS RθJA PD ID ID IDM RθJA...
