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NTLJS4159N
Power MOSFET
30 V, 7.8 A, Single N−Channel, 2x2 mm WDFN Package
Features
• WDFN Package Provides Exposed Drain Pad for Excellent Thermal
Conduction
• 2x2 mm Footprint Same as SC−88 • Lowest RDS(on) in 2x2 mm Package • 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate
Drive
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments • This is a Pb−Free Device
Applications
• DC−DC Conversion • Boost Circuits for LED Backlights • Optimized for Battery and Load Management Applications in
Portable Equipment such as, Cell Phones, PDA’s, Media Players, etc.
• Low Side Load Switch
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±8.
NTLJS4159N Datasheet
