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NTBS2D7N06M7 - N-Channel Power MOSFET

Features

  • Typical RDS(on) = 2.2 mW at VGS = 10 V, ID = 80 A.
  • Typical Qg(tot) = 80 nC at VGS = 10 V, ID = 80 A.
  • UIS Capability.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription

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NTBS2D7N06M7 N‐Channel PowerTrench) MOSFET 60 V, 110 A, 2.7 mW Features • Typical RDS(on) = 2.
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